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PDTA115TMB,315
manufacturer:
NXP USA Inc.
Description:
NOW NEXPERIA PDTA115TMB - SMALL
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
100 MA
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Mounting Type:
Surface Mount
Frequency - Transition:
180 MHz
Package:
Bulk
Series:
-
Vce Saturation (Max) @ Ib, Ic:
150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
DFN1006B-3
Resistor - Base (R1):
100 KOhms
Mfr:
NXP USA Inc.
Current - Collector Cutoff (Max):
1µA
Power - Max:
250 MW
Package / Case:
SC-101, SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Base Product Number:
PDTA115
Model Number:
PDTA115TMB,315
Introduction
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 180 MHz 250 mW Surface Mount DFN1006B-3
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