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FA4F4M-T1B-A
manufacturer:
Renesas Electronics America Inc
Description:
PROGRAM ADAPTER
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
100 MA
Product Status:
Obsolete
Transistor Type:
NPN - Pre-Biased
Package:
Box
Series:
-
Vce Saturation (Max) @ Ib, Ic:
200mV @ 250µ, 5mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
22 Ohms
Mfr:
Renesas Electronics America Inc
Resistor - Emitter Base (R2):
22 Ohms
Current - Collector Cutoff (Max):
100nA (ICBO)
Power - Max:
200 MW
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 50mA, 5V
Base Product Number:
FA4F4M
Model Number:
FA4F4M-T1B-A
Introduction
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW
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