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DTD113ZSTP
manufacturer:
Rohm Semiconductor
Description:
TRANS DIGITAL BJT NPN 500MA 3-PI
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
500 MA
Product Status:
Active
Transistor Type:
NPN - Pre-Biased + Diode
Frequency - Transition:
200 MHz
Mounting Type:
Through Hole
Package:
Tape & Reel (TR)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
SPT
Resistor - Base (R1):
1 KOhms
Mfr:
Rohm Semiconductor
Resistor - Emitter Base (R2):
10 KOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
300 MW
Package / Case:
SC-72 Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
82 @ 50mA, 5V
Base Product Number:
DTD113
Model Number:
DTD113ZSTP
Introduction
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 50 V 500 mA 200 MHz 300 mW Through Hole SPT
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