A5G35H120NT2
manufacturer:
NXP USA Inc.
Description:
AIRFAST RF POWER GAN TRANSISTOR,
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
RF FETs, MOSFETs
Product Status:
Active
Mounting Type:
Surface Mount
Voltage - Rated:
125 V
Package:
Tape & Reel (TR)
Configuration:
-
Series:
-
Noise Figure:
-
Supplier Device Package:
10-DFN (7x10)
Voltage - Test:
48 V
Mfr:
NXP USA Inc.
Frequency:
3.3GHz ~ 3.7GHz
Gain:
14.1dB
Package / Case:
10-PowerLDFN
Current - Test:
70 MA
Power - Output:
18W
Technology:
-
Current Rating (Amps):
-
Introduction
RF Mosfet 48 V 70 mA 3.3GHz ~ 3.7GHz 14.1dB 18W 10-DFN (7x10)
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