A3G26H200W17SR3
manufacturer:
NXP USA Inc.
Description:
AIRFAST RF POWER GAN TRANSISTOR,
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
RF FETs, MOSFETs
Product Status:
Active
Configuration:
-
Voltage - Rated:
125 V
Package:
Tape & Reel (TR)
Series:
-
Noise Figure:
-
Supplier Device Package:
NI-780S-4S2S
Voltage - Test:
48 V
Mfr:
NXP USA Inc.
Frequency:
2.496GHz ~ 2.69GHz
Gain:
14.2dB
Package / Case:
NI-780S-4S2S
Current - Test:
120 MA
Power - Output:
34W
Technology:
-
Current Rating (Amps):
-
Introduction
RF Mosfet 48 V 120 mA 2.496GHz ~ 2.69GHz 14.2dB 34W NI-780S-4S2S
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