PTAB182002TCV2R250XTMA1
manufacturer:
Infineon Technologies
Description:
IC RF FET LDMOS 190W H-49248H-4
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
RF FETs, MOSFETs
Product Status:
Obsolete
Mounting Type:
Surface Mount
Voltage - Rated:
65 V
Package:
Tape & Reel (TR)
Series:
-
Noise Figure:
-
Supplier Device Package:
H-49248H-4
Voltage - Test:
28 V
Mfr:
Infineon Technologies
Frequency:
1.805GHz ~ 1.88GHz
Gain:
14.8dB
Package / Case:
H-49248H-4
Current - Test:
520 MA
Power - Output:
29W
Technology:
LDMOS
Current Rating (Amps):
10µA
Introduction
RF Mosfet 28 V 520 mA 1.805GHz ~ 1.88GHz 14.8dB 29W H-49248H-4
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