A2T18H455W23NR6
manufacturer:
NXP USA Inc.
Description:
AIRFAST RF POWER LDMOS TRANSISTO
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
RF FETs, MOSFETs
Product Status:
Obsolete
Mounting Type:
Chassis Mount
Voltage - Rated:
65 V
Package:
Tape & Reel (TR)
Series:
-
Noise Figure:
-
Supplier Device Package:
OM-1230-4L2S
Voltage - Test:
31.5 V
Mfr:
NXP USA Inc.
Frequency:
1.805GHz ~ 1.88GHz
Gain:
14.5dB
Package / Case:
OM-1230-4L2S
Current - Test:
1.08 A
Power - Output:
56dBm
Technology:
LDMOS
Current Rating (Amps):
10µA
Base Product Number:
A2T18
Introduction
RF Mosfet 31.5 V 1.08 A 1.805GHz ~ 1.88GHz 14.5dB 56dBm OM-1230-4L2S
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