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Home > products > Discrete Semiconductor Products > NXH600B100H4Q2F2SG

NXH600B100H4Q2F2SG

NXH600B100H4Q2F2SG
manufacturer:
onsemi
Description:
MASS MARKET GEN3 Q2BOOST
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector (Ic) (Max):
192 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Tray
Series:
-
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max):
1000 V
Supplier Device Package:
44-PIM (93x47)
Mfr:
Onsemi
Operating Temperature:
-40°C ~ 175°C (TJ)
Current - Collector Cutoff (Max):
10 µA
IGBT Type:
Trench Field Stop
Power - Max:
511 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
13.256 NF @ 20 V
Configuration:
Three Level Inverter
NTC Thermistor:
Yes
Base Product Number:
NXH600
Introduction
IGBT Module Trench Field Stop Three Level Inverter 1000 V 192 A 511 W Chassis Mount 44-PIM (93x47)
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