GB35XF120K
manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
IGBT MODULE 1200V 50A 284W
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
50 A
Product Status:
Obsolete
Configuration:
Three Phase Inverter
Mounting Type:
Chassis Mount
Current - Collector Cutoff (Max):
100 µA
Series:
-
Vce(on) (Max) @ Vge, Ic:
3V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
-
Mfr:
Vishay General Semiconductor - Diodes Division
Operating Temperature:
150°C (TJ)
Power - Max:
284 W
Package / Case:
ECONO2
Input:
Standard
Input Capacitance (Cies) @ Vce:
3.475 NF @ 30 V
IGBT Type:
NPT
NTC Thermistor:
No
Base Product Number:
GB35
Introduction
IGBT Module NPT Three Phase Inverter 1200 V 50 A 284 W Chassis Mount
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