DF80R12W2H3B11BOMA1
manufacturer:
Infineon Technologies
Description:
IGBT MODULE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
50 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
1.7V @ 15V, 20A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
-
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 150°C (TJ)
Current - Collector Cutoff (Max):
1 MA
IGBT Type:
-
Power - Max:
190 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
2.35 NF @ 25 V
Configuration:
Dual Boost Chopper
NTC Thermistor:
Yes
Introduction
IGBT Module Dual Boost Chopper 1200 V 50 A 190 W Chassis Mount
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