DDB2U30N08VRBOMA1307
manufacturer:
Infineon Technologies
Description:
IGBT MODULE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
25 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
2.55V @ 15V, 20A
Voltage - Collector Emitter Breakdown (Max):
600 V
Supplier Device Package:
Module
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 125°C (TJ)
Current - Collector Cutoff (Max):
1 MA
IGBT Type:
-
Power - Max:
20 MW
Input:
Standard
Input Capacitance (Cies) @ Vce:
880 PF @ 25 V
Configuration:
3 Independent
NTC Thermistor:
Yes
Introduction
IGBT Module 3 Independent 600 V 25 A 20 mW Chassis Mount Module
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