VS-GB50TP120N
manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
IGBT MOD 1200V 100A INT-A-PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
100 A
Product Status:
Obsolete
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
INT-A-PAK (3 + 4)
Vce(on) (Max) @ Vge, Ic:
2.15V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
INT-A-PAK
Mfr:
Vishay General Semiconductor - Diodes Division
Operating Temperature:
150°C (TJ)
Current - Collector Cutoff (Max):
5 MA
IGBT Type:
-
Power - Max:
446 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
4.29 NF @ 25 V
Configuration:
Half Bridge
NTC Thermistor:
No
Base Product Number:
GB50
Introduction
IGBT Module Half Bridge 1200 V 100 A 446 W Chassis Mount INT-A-PAK
Send RFQ
Stock:
MOQ: