FPF2C110BI07AS2
manufacturer:
onsemi
Description:
IGBT MODULE 650V 40A 300W F2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
40 A
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tray
Series:
-
Package / Case:
30-DIP Module
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max):
650 V
Supplier Device Package:
F2
Mfr:
Onsemi
Current - Collector Cutoff (Max):
250 µA
IGBT Type:
-
Power - Max:
300 W
Input:
Standard
Operating Temperature:
-40°C ~ 150°C
Configuration:
Half Bridge
NTC Thermistor:
Yes
Base Product Number:
FPF2C110
Introduction
IGBT Module Half Bridge 650 V 40 A 300 W Through Hole F2
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