BSM75GD120DN2BOSA1
manufacturer:
Infineon Technologies
Description:
IGBT MOD 1200V 103A 520W
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
103 A
Product Status:
Last Time Buy
Mounting Type:
Chassis Mount
Package:
Tray
Series:
-
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
3V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
Module
Mfr:
Infineon Technologies
Operating Temperature:
150°C (TJ)
Current - Collector Cutoff (Max):
1.5 MA
IGBT Type:
-
Power - Max:
520 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
5.1 NF @ 25 V
Configuration:
Three Phase Inverter
NTC Thermistor:
No
Base Product Number:
BSM75GD120
Introduction
IGBT Module Three Phase Inverter 1200 V 103 A 520 W Chassis Mount Module
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