BSM25GP120B2BOSA1
manufacturer:
Infineon Technologies
Description:
IGBT MODULE 1200V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
45 A
Product Status:
Last Time Buy
Mounting Type:
Chassis Mount
Package:
Tray
Series:
-
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
2.55V @ 15V, 25A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
Module
Mfr:
Infineon Technologies
Operating Temperature:
150°C (TJ)
Current - Collector Cutoff (Max):
500 µA
IGBT Type:
-
Power - Max:
230 W
Input:
Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce:
1.5 NF @ 25 V
Configuration:
Full Bridge
NTC Thermistor:
Yes
Base Product Number:
BSM25G
Introduction
IGBT Module Full Bridge 1200 V 45 A 230 W Chassis Mount Module
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