VS-GB50YF120N
manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
IGBT MOD 1200V 66A ECONO2 4PACK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
66 A
Product Status:
Obsolete
Mounting Type:
Chassis Mount
Current - Collector Cutoff (Max):
250 µA
Series:
-
Package:
Bulk
Vce(on) (Max) @ Vge, Ic:
4.5V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
ECONO2 4PACK
Mfr:
Vishay General Semiconductor - Diodes Division
Power - Max:
330 W
Package / Case:
Module
Input:
Standard
Operating Temperature:
150°C (TJ)
IGBT Type:
-
NTC Thermistor:
No
Base Product Number:
GB50
Introduction
IGBT Module 1200 V 66 A 330 W Chassis Mount ECONO2 4PACK
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