BSM75GB170DN2HOSA1
manufacturer:
Infineon Technologies
Description:
IGBT MOD 1700V 110A 625W
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
110 A
Product Status:
Obsolete
Mounting Type:
Chassis Mount
Package:
Tray
Series:
-
Vce(on) (Max) @ Vge, Ic:
3.9V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max):
1700 V
Supplier Device Package:
Module
Mfr:
Infineon Technologies
Operating Temperature:
150°C (TJ)
Power - Max:
625 W
IGBT Type:
-
Package / Case:
Module
Input:
Standard
Input Capacitance (Cies) @ Vce:
11 NF @ 25 V
Configuration:
Half Bridge
NTC Thermistor:
No
Base Product Number:
BSM75G
Introduction
IGBT Module Half Bridge 1700 V 110 A 625 W Chassis Mount Module
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