VS-GB200TH120U
manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
IGBT MOD 1200V 330A INT-A-PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
330 A
Product Status:
Obsolete
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
Double INT-A-PAK (3 + 4)
Vce(on) (Max) @ Vge, Ic:
3.6V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
Double INT-A-PAK
Mfr:
Vishay General Semiconductor - Diodes Division
Operating Temperature:
150°C (TJ)
Current - Collector Cutoff (Max):
5 MA
IGBT Type:
-
Power - Max:
1316 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
16.9 NF @ 30 V
Configuration:
Half Bridge
NTC Thermistor:
No
Base Product Number:
GB200
Introduction
IGBT Module Half Bridge 1200 V 330 A 1316 W Chassis Mount Double INT-A-PAK
Send RFQ
Stock:
MOQ: