BSM25GB120DN2
manufacturer:
Infineon Technologies
Description:
IGBT MODULE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
38 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
3V @ 15V, 25A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
Module
Mfr:
Infineon Technologies
Operating Temperature:
150°C (TJ)
Current - Collector Cutoff (Max):
800 µA
IGBT Type:
-
Power - Max:
200 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
1.65 NF @ 25 V
Configuration:
Half Bridge
NTC Thermistor:
No
Introduction
IGBT Module Half Bridge 1200 V 38 A 200 W Chassis Mount Module
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