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Home > products > Discrete Semiconductor Products > FP35R12N2T7B16BPSA1

FP35R12N2T7B16BPSA1

FP35R12N2T7B16BPSA1
manufacturer:
Infineon Technologies
Description:
LOW POWER ECONO
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector (Ic) (Max):
35 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Tray
Series:
TRENCHSTOP™
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
1.6V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
AG-ECONO2B
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 175°C (TJ)
Current - Collector Cutoff (Max):
7 µA
IGBT Type:
Trench Field Stop
Power - Max:
20 MW
Input:
Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce:
6.62 NF @ 25 V
Configuration:
Three Phase Inverter
NTC Thermistor:
Yes
Introduction
IGBT Module Trench Field Stop Three Phase Inverter 1200 V 35 A 20 mW Chassis Mount AG-ECONO2B
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