FZ3600R17HE4NPSA1
manufacturer:
Infineon Technologies
Description:
INSULATED GATE BIPOLAR TRANSISTO
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
3600 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 3.6kA
Voltage - Collector Emitter Breakdown (Max):
1700 V
Supplier Device Package:
-
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 150°C (TJ)
Current - Collector Cutoff (Max):
5 MA
IGBT Type:
-
Power - Max:
21000 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
295 NF @ 25 V
Configuration:
Single Switch
NTC Thermistor:
No
Introduction
IGBT Module Single Switch 1700 V 3600 A 21000 W Chassis Mount
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