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Home > products > Discrete Semiconductor Products > FF100R12YT3B60BOMA1

FF100R12YT3B60BOMA1

FF100R12YT3B60BOMA1
manufacturer:
Infineon Technologies
Description:
FF100R12YT3B60BO- IGBT MOD 1.2kV
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector (Ic) (Max):
140 A
Product Status:
Active
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
2.15V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
-
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 125°C (TJ)
Current - Collector Cutoff (Max):
3 MA
IGBT Type:
Trench
Power - Max:
1650 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
18.5 NF @ 25 V
Configuration:
Half Bridge
NTC Thermistor:
Yes
Introduction
IGBT Module Trench Half Bridge 1200 V 140 A 1650 W Chassis Mount
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