APTGT35H120T1G
manufacturer:
Microsemi Corporation
Description:
IGBT MODULE 1200V 55A 208W SP1
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
55 A
Product Status:
Obsolete
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
SP1
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
SP1
Mfr:
Microsemi Corporation
Operating Temperature:
-40°C ~ 150°C (TJ)
Current - Collector Cutoff (Max):
250 µA
IGBT Type:
Trench Field Stop
Power - Max:
208 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
2.5 NF @ 25 V
Configuration:
Full Bridge Inverter
NTC Thermistor:
Yes
Introduction
IGBT Module Trench Field Stop Full Bridge Inverter 1200 V 55 A 208 W Chassis Mount SP1
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