APTGT75A1202G
manufacturer:
Microsemi Corporation
Description:
IGBT MODULE 1200V 110A 357W SP2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
110 A
Product Status:
Obsolete
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
SP2
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
SP2
Mfr:
Microsemi Corporation
Operating Temperature:
-40°C ~ 150°C (TJ)
Current - Collector Cutoff (Max):
50 µA
IGBT Type:
Trench Field Stop
Power - Max:
357 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
5.34 NF @ 25 V
Configuration:
Half Bridge
NTC Thermistor:
No
Introduction
IGBT Module Trench Field Stop Half Bridge 1200 V 110 A 357 W Chassis Mount SP2
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