VS-GB200LH120N
manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
IGBT MOD 1200V 370A INT-A-PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
370 A
Product Status:
Obsolete
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
Double INT-A-PAK (3 + 4)
Vce(on) (Max) @ Vge, Ic:
2.07V @ 15V, 200A (Typ)
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
Double INT-A-PAK
Mfr:
Vishay General Semiconductor - Diodes Division
Operating Temperature:
-40°C ~ 150°C (TJ)
Current - Collector Cutoff (Max):
100 NA
IGBT Type:
-
Power - Max:
1562 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
18 NF @ 25 V
Configuration:
Single
NTC Thermistor:
No
Base Product Number:
GB200
Introduction
IGBT Module Single 1200 V 370 A 1562 W Chassis Mount Double INT-A-PAK
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