VS-GT50TP60N
manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
IGBT MOD 600V 85A 208W INT-A-PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
85 A
Product Status:
Obsolete
Mounting Type:
Chassis Mount
Package:
Bulk
Series:
-
Package / Case:
INT-A-PAK (3 + 4)
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max):
600 V
Supplier Device Package:
INT-A-PAK
Mfr:
Vishay General Semiconductor - Diodes Division
Operating Temperature:
175°C (TJ)
Current - Collector Cutoff (Max):
1 MA
IGBT Type:
Trench
Power - Max:
208 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
3.03 NF @ 30 V
Configuration:
Half Bridge
NTC Thermistor:
No
Base Product Number:
GT50
Introduction
IGBT Module Trench Half Bridge 600 V 85 A 208 W Chassis Mount INT-A-PAK
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