BSM75GAR120DN2HOSA1
manufacturer:
Infineon Technologies
Description:
IGBT MOD 1200V 30A 235W
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
30 A
Product Status:
Obsolete
Mounting Type:
Chassis Mount
Package:
Tray
Series:
-
Package / Case:
Module
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 15A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Supplier Device Package:
Module
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 175°C (TJ)
Current - Collector Cutoff (Max):
400 µA
IGBT Type:
Trench Field Stop
Power - Max:
235 W
Input:
Standard
Input Capacitance (Cies) @ Vce:
1 NF @ 25 V
Configuration:
Single
NTC Thermistor:
No
Base Product Number:
BSM75GAR120
Introduction
IGBT Module Trench Field Stop Single 1200 V 30 A 235 W Chassis Mount Module
Send RFQ
Stock:
MOQ: