FAM65HR51DS2
manufacturer:
onsemi
Description:
IGBT MODULE 650V 33A 135W
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
Current - Collector (Ic) (Max):
33 A
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Series:
-
Vce(on) (Max) @ Vge, Ic:
-
Voltage - Collector Emitter Breakdown (Max):
650 V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
135 W
IGBT Type:
-
Input:
Standard
Input Capacitance (Cies) @ Vce:
4.86 NF @ 400 V
Configuration:
Half Bridge Inverter
NTC Thermistor:
No
Base Product Number:
FAM65
Introduction
IGBT Module Half Bridge Inverter 650 V 33 A 135 W Through Hole
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