PUMF12,115
Manufacturer:
NXP USA Inc.
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max):
100mA
Product Status:
Active
Transistor Type:
1 NPN Pre-Biased, 1 PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Package:
Bulk
Series:
-
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max):
50V, 40V
Supplier Device Package:
6-TSSOP
Resistor - Base (R1):
22kOhms
Mfr:
NXP USA Inc.
Resistor - Emitter Base (R2):
47kOhms
Current - Collector Cutoff (Max):
1µA
Power - Max:
300mW
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 5V / 120 @ 1mA, 6V
Base Product Number:
PUMF12
Introduction
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA 100MHz 300mW Surface Mount 6-TSSOP
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