EMB6T2R
manufacturer:
Rohm Semiconductor
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max):
30mA
Product Status:
Not For New Designs
Transistor Type:
2 PNP - Pre-Biased (Dual)
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
EMT6
Resistor - Base (R1):
47kOhms
Mfr:
Rohm Semiconductor
Resistor - Emitter Base (R2):
47kOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
150mW
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
68 @ 5mA, 5V
Base Product Number:
EMB6T2
Introduction
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 30mA 250MHz 150mW Surface Mount EMT6
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