RN1503(TE85L,F)
manufacturer:
Toshiba Semiconductor and Storage
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max):
100mA
Product Status:
Active
Transistor Type:
2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Package:
Cut Tape (CT)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
SMV
Resistor - Base (R1):
22kOhms
Mfr:
Toshiba Semiconductor And Storage
Resistor - Emitter Base (R2):
22kOhms
Current - Collector Cutoff (Max):
100nA (ICBO)
Power - Max:
300mW
Package / Case:
SC-74A, SOT-753
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 10mA, 5V
Base Product Number:
RN1503
Introduction
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 300mW Surface Mount SMV
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