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PBLS1502Y,115

PBLS1502Y,115
manufacturer:
NXP USA Inc.
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max):
100mA, 500mA
Product Status:
Active
Transistor Type:
1 NPN Pre-Biased, 1 PNP
Frequency - Transition:
280MHz
Mounting Type:
Surface Mount
Package:
Bulk
Series:
-
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max):
50V, 15V
Supplier Device Package:
SOT-363
Resistor - Base (R1):
4.7kOhms
Mfr:
NXP USA Inc.
Resistor - Emitter Base (R2):
4.7kOhms
Current - Collector Cutoff (Max):
1µA, 100nA
Power - Max:
300mW
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 5V / 150 @ 100mA, 2V
Base Product Number:
PBLS1502
Introduction
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 15V 100mA, 500mA 280MHz 300mW Surface Mount SOT-363
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