RN2910(T5L,F,T)
manufacturer:
Toshiba Semiconductor and Storage
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max):
100mA
Product Status:
Obsolete
Transistor Type:
2 PNP - Pre-Biased (Dual)
Frequency - Transition:
200MHz
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
US6
Resistor - Base (R1):
4.7kOhms
Mfr:
Toshiba Semiconductor And Storage
Resistor - Emitter Base (R2):
-
Current - Collector Cutoff (Max):
100nA (ICBO)
Power - Max:
200mW
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Base Product Number:
RN2910
Introduction
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
Send RFQ
Stock:
MOQ: