PUML1,115
manufacturer:
NXP USA Inc.
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max):
100mA, 200mA
Product Status:
Obsolete
Transistor Type:
1 NPN Pre-Biased, 1 NPN
Frequency - Transition:
230MHz
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA / 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
6-TSSOP
Resistor - Base (R1):
10kOhms
Mfr:
NXP USA Inc.
Resistor - Emitter Base (R2):
10kOhms
Current - Collector Cutoff (Max):
1µA
Power - Max:
300mW
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 5mA, 5V / 210 @ 2mA, 10V
Base Product Number:
PUML1
Introduction
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V 100mA, 200mA 230MHz 300mW Surface Mount 6-TSSOP
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