NSVB114YPDXV6T1G
manufacturer:
onsemi
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max):
100mA
Product Status:
Obsolete
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Frequency - Transition:
-
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
SOT-563
Resistor - Base (R1):
10kOhms
Mfr:
Onsemi
Resistor - Emitter Base (R2):
47kOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
500mW
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
Base Product Number:
NSVB11
Introduction
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
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