PEMD14,115
manufacturer:
NXP USA Inc.
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max):
100mA
Product Status:
Active
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Frequency - Transition:
-
Mounting Type:
Surface Mount
Package:
Bulk
Series:
-
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
SOT-666
Resistor - Base (R1):
47kOhms
Mfr:
NXP USA Inc.
Resistor - Emitter Base (R2):
-
Current - Collector Cutoff (Max):
1µA
Power - Max:
300mW
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Base Product Number:
PEMD14
Introduction
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
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