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BSM200GB170DLC
manufacturer:
Infineon Technologies
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
400 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
400 A
Pd - Power Dissipation ::
1660 W
Collector- Emitter Voltage VCEO Max ::
1700 V
Package / Case ::
62 Mm
Maximum Operating Temperature ::
+ 125 C
Configuration ::
Dual
Collector-Emitter Saturation Voltage ::
2.6 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
BSM200GB170DLC
Introduction
The BSM200GB170DLC,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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