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HN4B01JE(TE85L,F)
manufacturer:
Toshiba
Category:
Semiconductors
Specifications
Transistor Polarity ::
NPN, PNP
Product Category ::
Bipolar Transistors - BJT
Maximum DC Collector Current ::
0.15 A
Collector- Emitter Voltage VCEO Max ::
50 V
Maximum Operating Temperature ::
+ 150 C
Gain Bandwidth Product FT ::
80 MHz (Min)
Configuration ::
Dual
Collector- Base Voltage VCBO ::
60 V @ NPN Or 50 V @ PNP
Series ::
HN4B01
Emitter- Base Voltage VEBO ::
5 V
Manufacturer ::
Toshiba
Model Number:
HN4B01JE(TE85L,F)
Introduction
The HN4B01JE(TE85L,F),from Toshiba,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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