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IRG7PH50UPBF
manufacturer:
Infineon Technologies
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
200 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
140 A
Pd - Power Dissipation ::
556 W
Collector- Emitter Voltage VCEO Max ::
1.2 KV
Package / Case ::
TO-247-3
Maximum Operating Temperature ::
+ 175 C
Maximum Gate Emitter Voltage ::
+/- 30 V
Packaging ::
Tube
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.7 V
Manufacturer ::
Infineon Technologies
Model Number:
IRG7PH50UPBF
Introduction
The IRG7PH50UPBF,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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