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F3L75R12W1H3_B27
manufacturer:
Infineon Technologies
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
100 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
45 A
Pd - Power Dissipation ::
275 W
Collector- Emitter Voltage VCEO Max ::
1.2 KV
Package / Case ::
EasyPack1B
Maximum Operating Temperature ::
+ 150 C
Configuration ::
3-Phase
Collector-Emitter Saturation Voltage ::
1.45 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
F3L75R12W1H3_B27
Introduction
The F3L75R12W1H3_B27,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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