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IXBT12N300HV
manufacturer:
IXYS
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
+/- 100 NA
Product Category ::
IGBT Transistors
Mounting Style ::
SMD/SMT
Continuous Collector Current At 25 C ::
30 A
Pd - Power Dissipation ::
160 W
Collector- Emitter Voltage VCEO Max ::
3 KV
Package / Case ::
TO-268-2
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
+/- 20 V
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
2.8 V
Manufacturer ::
IXYS
Model Number:
IXBT12N300HV
Introduction
The IXBT12N300HV,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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