Specifications
Gate-Emitter Leakage Current ::
40 UA
Product Category ::
IGBT Transistors
Mounting Style ::
SMD/SMT
Continuous Collector Current At 25 C ::
29 A
Pd - Power Dissipation ::
200 W
Collector- Emitter Voltage VCEO Max ::
560 V
Package / Case ::
TO-263AB
Maximum Operating Temperature ::
+ 175 C
Maximum Gate Emitter Voltage ::
+/- 10 V
Packaging ::
Reel
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1 V
Manufacturer ::
Fairchild Semiconductor
Model Number:
FGB3056_F085
Introduction
The FGB3056_F085,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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