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IRG6B330UDPBF
manufacturer:
IR / Infineon
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
+/- 100 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
70 A
Pd - Power Dissipation ::
160 W
Collector- Emitter Voltage VCEO Max ::
330 V
Package / Case ::
TO-220-3
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
+/- 30 V
Packaging ::
Tube
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.69 V
Manufacturer ::
IR / Infineon
Model Number:
IRG6B330UDPBF
Introduction
The IRG6B330UDPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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