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FP40R12KE3
manufacturer:
Infineon Technologies
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
400 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
55 A
Pd - Power Dissipation ::
200 W
Collector- Emitter Voltage VCEO Max ::
1200 V
Package / Case ::
EconoPIM2
Maximum Operating Temperature ::
+ 125 C
Configuration ::
Hex
Collector-Emitter Saturation Voltage ::
2.3 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
FP40R12KE3
Introduction
The FP40R12KE3,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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