english
FZ2400R12KE3
manufacturer:
Infineon Technologies
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
400 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
2400 A
Pd - Power Dissipation ::
10 KW
Collector- Emitter Voltage VCEO Max ::
1200 V
Package / Case ::
IHM 130X140-7
Maximum Operating Temperature ::
+ 125 C
Configuration ::
Dual Common Emitter Common Gate
Collector-Emitter Saturation Voltage ::
1.7 V
Manufacturer ::
Infineon Technologies
Model Number:
FZ2400R12KE3
Introduction
The FZ2400R12KE3,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Send RFQ
Stock:
MOQ: