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FZ2400R17KF6C_B2

Name: FZ2400R17KF6C_B2
Brand: Beijing Silk Road Enterprise Management Services Co.,LTD
SKU: FZ2400R17KF6C_B2
Price: Negotiable USD
Availability: InStock

manufacturer:

Infineon Technologies

Category:

Semiconductors

Specifications

Gate-Emitter Leakage Current ::

400 NA

Product Category ::

IGBT Modules

Continuous Collector Current At 25 C ::

3800 A

Pd - Power Dissipation ::

19.2 KW

Collector- Emitter Voltage VCEO Max ::

1700 V

Package / Case ::

IHM190

Maximum Operating Temperature ::

+ 125 C

Configuration ::

Triple Common Emitter Common Gate

Collector-Emitter Saturation Voltage ::

2.6 V

Product ::

IGBT Silicon Modules

Manufacturer ::

Infineon Technologies

Model Number:

FZ2400R17KF6C_B2

Introduction

The FZ2400R17KF6C_B2,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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Address:

E-mail: kf@maoyt.com

Phone: 86--15112670997

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