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FGA50N100BNTDTU
manufacturer:
Fairchild Semiconductor
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
+/- 500 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Pd - Power Dissipation ::
156 W
Collector- Emitter Voltage VCEO Max ::
1000 V
Package / Case ::
TO-3P-3
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
+/- 25 V
Packaging ::
Tube
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
2.5 V
Manufacturer ::
Fairchild Semiconductor
Model Number:
FGA50N100BNTDTU
Introduction
The FGA50N100BNTDTU,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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