EMZ7T2R
Specifications
				
						Category:
						
																				Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
					
						Current - Collector (Ic) (Max):
						
																				500mA
					
						Product Status:
						
																				Active
					
						Transistor Type:
						
																				NPN, PNP
					
						Mounting Type:
						
																				Surface Mount
					
						Frequency - Transition:
						
																				320MHz, 260MHz
					
						Package:
						
																				Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
					
						Series:
						
																				-
					
						Vce Saturation (Max) @ Ib, Ic:
						
																				250mV @ 10mA, 200mA
					
						Voltage - Collector Emitter Breakdown (Max):
						
																				12V
					
						Supplier Device Package:
						
																				EMT6
					
						Mfr:
						
																				Rohm Semiconductor
					
						Current - Collector Cutoff (Max):
						
																				100nA (ICBO)
					
						Power - Max:
						
																				150mW
					
						Package / Case:
						
																				SOT-563, SOT-666
					
						Operating Temperature:
						
																				150°C (TJ)
					
						DC Current Gain (hFE) (Min) @ Ic, Vce:
						
																				270 @ 10mA, 2V
					
						Base Product Number:
						
														EMZ7T2
					Introduction
				
						Bipolar (BJT) Transistor Array NPN, PNP 12V 500mA 320MHz, 260MHz 150mW Surface Mount EMT6
					
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