HN1B04FE-GR,LF
manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS NPN/PNP 50V 0.15A ES6
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
150mA
Product Status:
Active
Transistor Type:
NPN, PNP
Mounting Type:
Surface Mount
Frequency - Transition:
80MHz
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
ES6
Mfr:
Toshiba Semiconductor And Storage
Current - Collector Cutoff (Max):
100nA (ICBO)
Power - Max:
100mW
Package / Case:
SOT-563, SOT-666
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 6V
Base Product Number:
HN1B04
Introduction
Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 80MHz 100mW Surface Mount ES6
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