NTE2018
manufacturer:
NTE Electronics, Inc
Description:
IC-8 CHAN CMOS/TTL DR 18-PIN DIP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
600mA
Product Status:
Active
Transistor Type:
8 NPN Darlington
Mounting Type:
Through Hole
Frequency - Transition:
-
Package:
Bag
Series:
-
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 350mA, 500A
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
18-PDIP
Mfr:
NTE Electronics, Inc
Power - Max:
1W
Package / Case:
18-DIP (0.300", 7.62mm)
Operating Temperature:
-20°C ~ 85°C (TA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Base Product Number:
NTE20
Introduction
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 600mA 1W Through Hole 18-PDIP
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